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DSF21545SV
DSF21545SV
Fast Recovery Diode
Replaces March 1998 version, DS4153-3.1 DS4153-4.0 January 2000
APPLICATIONS
s The DSF21545SV is a purpose designed freewheel diode to complement the DG858BW GTO in inverter circuits, using energy recovery snubbers.
FEATURES
s The DSF21545SV is designed for fast turn-on thus minimising reverse current through the GTO. s Low recovered charge for low losses. s DSF21545SV is housed in a similar outline to that of the DG858BW therefore offering complete mechanical compatibility for parallel and series clamping.
KEY PARAMETERS VRRM 4500V IF(AV) 3230A IFSM 20000A Qr 1800C trr 7.0s
VOLTAGE RATINGS
Type Number Repetitive Peak Reverse Voltage VRRM V 4500 Conditions
DSF21545SV45
VRSM = VRRM + 100V
Lower voltage grades available.
Outline type code: V. See Package Details for further information.
CURRENT RATINGS
Symbol Double Side Cooled IF(AV) IF(RMS) IF Mean forward current RMS value Continuous (direct) forward current Half wave resistive load, Tcase = 65oC Tcase = 65oC Tcase = 65oC 3230 5080 4680 A A A Parameter Conditions Max. Units
Single Side Cooled (Anode side) IF(AV) IF(RMS) IF Mean forward current RMS value Continuous (direct) forward current Half wave resistive load, Tcase = 65oC Tcase = 65oC Tcase = 65oC 2070 3255 2875 A A A 1/8
DSF21545SV
SURGE RATINGS
Symbol IFSM I2t IFSM I2t IFSM I2t Parameter Surge (non-repetitive) forward current 10ms half sine; with 0% VRRM, Tj = 150oC I2t for fusing Surge (non-repetitive) forward current 10ms half sine; with 50% VRRM, Tj = 150oC I2t for fusing Surge (non-repetitive) forward current 10ms half sine; with 100% VRRM, Tj = 150oC I2t for fusing A2s 1.28 x 106 A2s kA 2.0 x 106 16 A2s kA Conditions Max. 20 Units kA
THERMAL AND MECHANICAL DATA
Symbol Parameter Conditions Double side cooled Rth(j-c) Thermal resistance - junction to case Single side cooled Cathode dc Clamping force 35.0kN with mounting compound On-state (conducting) Double side Single side -55 34 0.015 0.002 0.004 150 150 48
o
Min. dc Anode dc -
Max. 0.0075 0.015
Units
o
C/W
o
C/W C/W C/W C/W
o
o
Rth(c-h)
Thermal resistance - case to heatsink
o
Tvj Tstg -
Virtual junction temperature Storage temperature range Clamping force
C C
o
kN
CHARACTERISTICS
Symbol VFM IRRM trr QRA1 IRM K VTO rT VFRM 2/8 Forward voltage Peak reverse current Reverse recovery time Recovered charge (50% chord) Reverse recovery current Soft factor Threshold voltage Slope resistance Forward recovery voltage At Tvj = 150oC At Tvj = 150oC di/dt = 1000A/s, Tj = 125oC IF = 1000A, diRR/dt = 100A/s Tcase = 150oC, VR = 100V Parameter Conditions At 3000A peak, Tcase = 25oC At VRRM, Tcase = 150oC Typ. 7.0 2 Max. 2.0 150 1800 500 1.25 0.25 75 Units V mA
s
C A V m V
DSF21545SV
DEFINITION OF K FACTOR AND QRA1
QRA1 = 0.5x IRR(t1 + t2) dIR/dt 0.5x IRR IRR t1 t2 k = t1/t2
CURVES
5000 Measured under pulse conditions
4000
Instantaneous forward current IF - (A)
3000
2000 Tj = 25C Tj = 150C 1000
0 0 1.0 2.0 3.0 4.0 Instantaneous forward voltage VF - (V)
Fig.1 Maximum (limit) forward characteristics
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DSF21545SV
500 Measured under pulse conditions
400
Instantaneous forward current IF - (A)
300
Tj = 150C 200
Tj = 25C
100
0 0 0.5 1.0 1.5 2.0 Instantaneous forward voltage VF - (V)
Fig.2 Maximum (limit) forward characteristics
250 Current waveform VFR 200
Transient forward votage VFP - (V)
Voltage waveform y x di = y dt x Tj = 125C limit
150
100
Tj = 25C limit
50
0 500
1000
1500
2000
2500
3000
Rate of rise of forward current dIF/dt - (A/s)
Fig.3 Transient forward voltage vs rate of rise of forward current 4/8
DSF21545SV
100000 IF QS =
50s 0
Conditions: Tj = 150C, QS VR = 100V
Reverse recovered charge QS - (C)
10000
tp = 1ms dIR/dt IRR IF = 4000A IF = 2000A IF = 1000A IF = 500A IF = 200A
1000
IF = 100A
100
1
10 100 Rate of rise of reverse current dIR/dt - (A/s)
Fig.4 Recovered charge
1000
10000 Conditions: Tj = 150 C, VR = 100V
Reverse recovery current IRR - (A)
1000
IF = 4000A IF = 2000A IF = 1000A IF = 500A IF = 200A IF = 100A
100
10
1
10 100 Rate of rise of reverse current dIR/dt - (A/s)
1000
Fig.5 Typical reverse recovery current vs rate of rise of reverse current 5/8
DSF21545SV
0.1
Thermal impedance - C/W
0.01
d.c.Double side cooled
0.001
0.0001 0.001
0.01
0.1 Time - (s)
1.0
10
100
Fig.5 Maximum (limit) transient thermal impedance - junction to case
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DSF21545SV
PACKAGE DETAILS
For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE.
2 holes O3.6 x 2.0 deep (In both electrodes)
Cathode O112.5 max O73 nom
O73 nom
Anode
Nominal weight: 1100g Clamping force: 43kN 10% Package outine type code: V
ASSOCIATED PUBLICATIONS
Title Calculating the junction temperature or power semiconductors Recommendations for clamping power semiconductors Thyristor and diode measurement with a multi-meter Use of V , r on-state characteristic
TO T
Application Note Number AN4506 AN4839 AN4853 AN5001
27.0 25.4
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DSF21545SV
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete solution (PACs).
DEVICE CLAMPS
Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of preloaded clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of `T' 22mm Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies. Please refer to our application note on device clamping, AN4839
HEATSINKS
Power Assembly has it's own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or the factory.
http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. Unit 7 - 58 Antares Drive, Nepean, Ontario, Canada K2E 7W6. Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) CUSTOMER SERVICE CENTRES France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50 North America Tel: 011-800-5554-5554. Fax: 011-800-5444-5444 UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50 Germany Tel: 07351 827723 North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (831) 440-1988. Fax: (831) 440-1989 / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. (c) Dynex Semiconductor 2000 Publication No. DS4153-4 Issue No. 4.0 January 2000 TECHNICAL DOCUMENTATION - NOT FOR RESALE. PRINTED IN UNITED KINGDOM
Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
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